Toolbox for atomic layer deposition process development on high surface area powders

Atomic layer deposition (ALD) is an industrially applied technique for thin film deposition. The vast majority of processes target flat substrates rather than powders. For ALD on powders, new are needed, as different reaction conditions required. Here, two setups described in detail, which enhance the process development first setup capable directly measuring vapor pressure a given precursor by capacitance diaphragm gauge. Promising precursors can be pre-selected, and suitable saturation temperatures determined. second consists four parallel reactors with individual temperature zones to screen optimal window time efficient way. Identifying beforehand subsequently performing half cycle at reactor simultaneously will drastically reduce times. Validation both shown well-known precursors, trimethylaluminum deposit aluminum oxide diethyl zinc oxide, amorphous silica powder.